The 2025 M-SHORE REU projects will address key societal needs that can be met by semiconductor materials and device innovation such as: photocatalysis for solar fuels and carbon sequestration needed to mitigate the effects of climate change; new materials and integration methods to achieve nanoscale control of electronic properties for the next generation of computational circuits and high-resolution sensors; and innovation in photonics circuits and efficient power conversion devices to reduce global energy consumption.
Thrust Area: Wide Bandgap Materials and Devices
Project 1. Synthesis and photocatalytic properties of GaN nanostructures for sustainable energy devices (Prof. Zetian Mi, Electrical Engineering and Computer Science)
Artificial photosynthesis, i.e. the chemical transformation of sunlight, water, and carbon dioxide into high energy-rich fuels, is one of the keys to a sustainable, carbon-free, storable, and renewable source of energy. Although significant progress has been made for decades, the development of low cost, efficient, long-term stable semiconductor photocatalysts and photoelectrodes has remained challenging for the large-scale practical application of this frontier technology. The goal of this project is to investigate the optical, electronic, and photocatalytic properties of group III-nitride semiconductor nanostructures for artificial photosynthesis. These studies will help pave the way for the low cost, distributed generation of clean chemicals and fuels utilizing two of the most abundant natural resources on earth – sunlight and water – while significantly reducing carbon dioxide emissions. The REU student will study the structural and optical characterization of these nanostructures using scanning electron microscopy, photoluminescence spectroscopy, and photocatalytic water splitting experiments. The experimental results will be analyzed and correlated with the epitaxial growth and photocatalytic experiments. Over the past decade, Mi’s group has developed some of the most efficient artificial photosynthesis systems capable of direct solar water splitting and hydrogen fuel production. With support of Mi’s team and the LNF staff, an REU student will be able to make significant contributions to this technologically important research field.
Project 2. Enhancing p-type Doping of GaN for Power Electronics (Prof. Rachel Goldman, Materials Science and Engineering)
Si-based electronics are limited in high power applications by a low breakdown voltage. Wide bandgap semiconductors, such as gallium nitride, can support larger electric fields and thus higher voltages, with lower conduction loss. However, construction of bipolar semiconductor devices requires effective p– and n-type doping, and GaN p-type doping at high concentrations remains elusive. This project seeks to address this key knowledge gap. Goldman’s lab uses molecular beam epitaxy (MBE) to grow GaN. While surfactants and co-dopants such as O and Si used in MBE can improve p-type doping, the concentration of substitutional Mg is often limited, leading to limited p-type doping efficiency. The REU student will contribute to a larger project in Goldman’s group that is developing novel approaches to enhance the p-type doping of GaN and related alloys. The project involves a combined computational-experimental approach consisting of focused-ion-beam (FIB) nano-implantation of Mg in GaN during MBE, followed by computational and experimental ion channeling studies of Mg incorporation. The REU student will participate in the development of a modified Mg-Ga alloy source for FIB nano-implantation. They will perform hands-on analysis, assembly and test of the source, and will learn to analyze the epitaxy results to assess success. For example, the student will have the chance to assist in performing ion channeling measurements of doping and point defects in GaN and related alloys, to determine the impact of the new Mg-Ga alloy source on p-type doping. Additionally, the REU student will be introduced to the methods of Monte Carlo-Molecular Dynamics simulations of doping and point defects in GaN and related alloys, which will be used to interpret and corroborate the experimental results. By working on a discrete part of a larger project, the REU student will make key contributions to the development of game-changing technologies for high power electronics.
Thrust Area: Complex Oxide Materials and Devices
Project 3. Characterization of oxide thin film ferroelectrics for energy efficient computing (Prof. John Heron, Materials Science and Engineering)
Oxide ferroelectrics have had a recent resurgence of commercial interest due to the discovery of silicon compatible materials and the hysteretic switching of their surface charge. The combination has led to the commercialization of new non-volatile memories and a plethora of energy efficient computing devices including AI applications. Current materials research related to this area is engineering the materials for the dielectric responses for a targeted application, often utilizing the low switching voltages and non-volatility for energy efficiency. In this project, the REU student will work with a lab member to use electrical and surface characterization tools to assess the dielectric properties and nanoscale domain structure of oxide ferroelectric thin film materials. The REU student will learn how to use several fabrication tools in the Lurie nanofabrication facility (no prior knowledge is assumed) and electrical characterization metrologies, all while contributing to our fundamental understanding of ferroelectric materials for novel computing applications.
Project 4. Doping of germanium oxide semiconductors (Prof. Becky Peterson, Electrical Engineering and Computer Science)
Wide bandgap semiconductors such as GaN and SiC have been commercialized for diverse power electronics applications including power inverters in electrified vehicles and fast AC to DC charging. Current research explores ultra-wide bandgap (UWBG) semiconductors (~4.5eV+) to address even higher voltage, higher power future applications. Germanium dioxide, GeO2, has been theoretically predicted as a bi-polar dopable UWBG semiconductor. In this project, the REU student will work with a graduate student in Peterson’s group to use RF sputtering to deposit germanium dioxide films, pattern the layers, deposit metal contacts, and characterize the films electrical and material properties. The REU student will learn how to use numerous nanofabrication tools (no prior knowledge is assumed) and the project will contribute significantly to our fundamental understanding of UWBG materials for future high voltage and high power electronics.
Thrust Area: Nanotechnology for Devices
Project 5. On-chip photonic elements for atom-based quantum technologies (Prof. Alexander Burgers, Electrical Engineering and Computer Science)
Solid-state electronic devices function through the ability to control the motion of electrons and holes in solids. While these CMOS devices have been responsible to the exceptional performance of computers today, there are certain fundamental limitations of modern semiconductor technology. Solid-state ionic devices that utilize the motion of ions can overcome some of these limits by being analog, which is more efficient for artificial intelligence applications, and being more resilient to extreme environments like high temperatures, ionizing radiation, and electromagnetic interference. The Li+ group is developing solid-state devices that also utilize ions, particularly oxygen vacancies, to store and process information. Students will learn to fabricate and test these ionic memory devices, as well as characterize the materials that these devices utilize. This project is ideally suited to students with an interest in chemistry or materials science in addition to semiconductors.
Project 6. Localization and assembly of micro-fabricated particles (Prof. L. Jay Guo, Electrical Engineering and Computer Science)
This project addresses the challenge of precisely localizing large amounts of microparticles of varying shapes and sizes, and of different material composition, onto substrates with pre-defined sites. The process leverages surface interactions and geometric confinement to guide particles to the predefined positions, enabling accurate and repeatable placement. Factors such as surface energy, pattern geometry, and particle properties are essential for achieving high localization precision across diverse particle types. The REU participant will fabricate and characterize patterned substrates, fabricate and functionalize microparticles, and optimize the interplay between particle behavior and surface properties to enhance assembly accuracy. This research provides hands-on experience in microfabrication, surface modification, and advanced metrology, contributing to the development of scalable techniques for high-precision particle assembly for microelectronics and photonics applications.
Project 7. Transparent multicomponent aerogels for solar thermal applications (Prof. Andrej Lenert, Chemical Engineering)
Transparent aerogel materials allow sunlight in while blocking heat losses, making them a promising approach for converting sunlight into high-temperature heat at 600ºC and above. Reaching such high temperatures addresses an important piece of the energy puzzle by enabling next generation on-demand solar thermal plants (with overnight energy storage) and supplying clean heat to industrial processes that are otherwise particularly difficult to decarbonize. This REU project aims to investigate the relationship between the structure and chemistry of transparent aerogels and the flow of heat and light in these materials at high temperatures. The REU student will work alongside graduate mentors and a multidisciplinary project team to synthesize and characterize aerogels using cutting-edge techniques such as ultrahigh-aspect-ratio ALD, thermal conductivity measurements, specular and diffuse UV-Vis-NIR spectroscopy, and quantitative FT-IR measurements of emission and absorption, as well as prototype level testing. By participating in these studies, the student will gain an appreciation for how engineering at the atomic level can impact large-scale energy processes. The knowledge generated by this project will contribute to our understanding of energy transport in aerogels and assist in the development of design guidelines for optimizing the conversion of solar radiation into high-grade heat.
Project 8. Electrical Packaging for Silicon Nitride Quantum Chips (Prof. Zheshen Zhang, Electrical Engineering and Computer Science)
Silicon nitride photonic chips have demonstrated significant applications in the field of quantum information processing. The essential functionalities of system-level stabilization and modulation play a pivotal role in advancing Silicon Nitride quantum chips towards practical implementations in quantum technology. This project aims to develop advanced electrical packaging and control techniques, establishing interfaces between Silicon Nitride quantum chips and standard electrical components. These interfaces will be utilized for the stabilization and modulation of various photonic quantum components. The REU student engaged in this project will have the opportunity to acquire advanced nanofabrication skills, including photolithography, e-beam evaporation, lift-off processing, and wire bonding. Additionally, they will gain proficiency in testing Silicon Nitride quantum chips and developing control codes using programming languages such as Python and LabView. This research experience will provide a comprehensive understanding of state-of-the-art quantum technology and hands-on expertise in the fabrication and control of quantum components.
Project 9. Fabrication and Characterization of Large-Area Atomically Thin Semiconductors (Prof. Parag Deotare, Electrical Engineering and Computer Science)
The recent emergence of low dimensional quantum materials has provided an excellent platform to investigate various fundamental quantum excitations. In some materials such as monolayers of Transition Metal Dichalcogenides (TMDs), the Coulombic attraction between 2D electrons and holes binds to form hydrogen-like quasiparticles known as excitons. The strong binding energy in TMDs provide a unique platform for next-generation room temperature excitonic devices serving various applications from communication to sensing. The project will involve developing a new technique to create clean, and large-area TMD monolayers from bulk crystals. Traditional mechanical exfoliation techniques can leave polydimethylsiloxane (PDMS) residues on the TMD material surface, which significantly compromises the excitonic properties. The aim is to use noble metals such as gold for exfoliation that can utilize the chemical affinity of chalcogen atoms to create a stronger interaction between the TMD material and gold surface, thus enabling the exfoliation of clean two-dimensional TMD layers. Some of the fabrication tasks will include sample preparation, deposition of metal films under high vacuum, metrology of the film, etching and mechanical exfoliation. Characterization tasks may involve the use of SEM, AFM or optical spectroscopy.
Disclaimer: Please note these are generalized project descriptions and actual projects will depend on the needs of the PI and the direction of their research at the beginning of the program.